dv. s.iv ^,mi-c.ondu.d.oi lpioducki, one.. 20 stern ave. springfield, new jersey 07081 u.s.a. telephone: (973) 376-2922 (212)227-6005 fax: (973) 376-8960 npn darlington transistor BSR52 features ? high current (max. 1 a) ? low voltage (max. 80 v) ? integrated diode and resistor. applications ? industrial high gain amplification. limiting values in accordance with the absolute maximum rating system (iec 60134). symbol vcbo vces vebo ic 'cm ib ptot tstg tj 'amb parameter collector-base voltage collector-emitter voltage emitter-base voltage collector current (dc) peak collector current base current (dc) total power dissipation storage temperature junction temperature ambient temperature conditions open emitter vbe = 0 v open collector tamb < 25 c; note 1 min. - - - - - - - i-65 - -65 max. 90 80 5 1 2 100 830 +150 150 +150 unit v v v a a ma mw c rn* o/"4 note 1. transistor mounted on an fr4 printed-circuit board. nj semi-conductors reserves the right to change test conditions, parameter limits and package dimensions without notice. information furnished by nj semi-conductors is believed to be both accurate and reliable at the time of going to press. however, nj semi-conductors assumes no responsibility for any errors or omissions discovered in its use. nj semi-conductors encourages customers to verify that datasheets are current before placing orders. quality semi-conductors
npn darlington transistor BSR52 thermal characteristics symbol rthg-a) parameter thermal resistance from junction to ambient conditions note 1 value 150 unit k/w note 1. transistor mounted on an fr4 printed-circuit board. characteristics tamb = 25 c unless otherwise specified. symbol ices iebo hfe vcesat vbesat fr parameter collector-base cut-off current emitter-base cut-off current dc current gain collector-emitter saturation voltage base-emitter saturation voltage transition frequency conditions vbe = 0 v; vce = 80 v veb = 4 v; lc = 0 a vce- 10v; see fig. 2 lc = 150ma lc = 500 ma ic = 0.5a; ib = 0.5ma lc= 1 a; ib = 4ma ic = 0.5a; ib = 0.5ma lc = 1 a; ib = 4ma vce = 5 v; lc = 500 ma; f= 100mhz min. - - 1000 2000 - - - - - typ. - - - - - - - 200 max. 50 50 - 1.3 1.6 1.9 2.2 - unit na na v v v v mhz switching times (between 10% and 90% levels); see fig 3 ton toff turn-on time turn-off time icon = 500 ma; lbon = 0.5 ma; \boa = -0.5 ma - - - - 500 1300 ns ns
to-237 plastic package q irld t3 01 1 2 3 f b d +a + a d i jj t sec dim a i b i c d e f g h j k l m n min. 4.32 4.45 3.18 0.41 0.35 ? 1.14 ? 1.03 12.70 max. 5.33 5.20 4.19 0.55 0.50 5.40 1.40 2.54 1.20 ? 5 dec 1.982 1.20 2.082 1.40 all dimensions are in mm mold _ parting line pin configuration 1. collector 2. base 3. emitter
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